MEN9973J3 Datasheet, PDF (3/7 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Characteristic Curves
Spec. No. : C418J3-E
Issued Date : 2009.02.10
Revised Date :
Page No. : 3/7
On-Region Characteristics
30
VGS = 10V
7V 6V
5V
24
4.5V
18
12
4V
6
0
0
1
2
3
4
VDS - Drain-Source Voltage( V )
On-Resistance Variation with Temperature
2.2
ID = 10A
2.0 _{VGS = 10V}
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50 -25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
On-Resistance Variation with Drain Current and Gate Voltage
1.8
V GS= 4.0 V
1.6
4.5 V
1.4
5.0 V
1.2
6.0 V
7.0 V
1.0
10 V
0.8
0
6
12
18
ID - Drain Current( A )
24
30
On-Resistance Variation with Gate-to-Source Voltage
0.14
ID = 5 A
0.12
0.10
TA = 125° C
0.08
0.06
TA = 25° C
0.04
0.02
0
2
4
6
8
10
VGS - Gate-Source Voltage( V )
Transfer Characteristics
20
VDS= 5V
16
TA = -55° C
25° C
125° C
12
8
4
0
1
2
3
4
5
6
VGS - Gate-Source Voltage( V )
Body Diode Forward Voltage Variation with
Source Current and Temperature
100
VGS = 0V
10
1
T A= 125°C
0.1
25° C
0.01
-55° C
0.001
0.0001
0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Body Diode Forward Voltage( V )
MEN9973J3
CYStek Product Specification