BTD2114N3 Datasheet, PDF (4/8 Pages) Cystech Electonics Corp. – High Current Gain Medium Power NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C857N3
Issued Date : 2012.01.02
Revised Date :
Page No. : 4/8
Typical Characteristics(Cont.)
Saturation Voltage vs Collector Current
1000
VCESAT
Saturation Voltage vs Collector Current
1000
VCESAT=25IB
100
10
1
1
IC=100IB
IC= 50IB
IC= 25IB
IC= 10IB
10
100
1000
Collector Current---IC(mA)
100
10
1
1
125℃
100℃
75℃
25℃
-16℃
10
100
1000
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
1000
VBESAT
IC= 10IB
IC= 25IB
IC= 50IB
IC=100IB
100
1
10
100
1000
Collector Current---IC(mA)
1000
Cutoff Frequency vs Collector Current
fT@VCE=10V
Saturation Voltage vs Collector Current
1000
100
1
VBESAT=10IB
-25℃
25℃
75℃
100℃
125℃
10
100
Collector Current---IC(mA)
1000
Capacitance vs Reverse-biased Voltage
100
Cib
100
10
Cob
10
1
10
100
Collector Current---IC(mA)
BTD2114N3
1
0.1
1
10
100
Reverse-biased Voltage---VR(V)
CYStek Product Specification