BTD2114N3 Datasheet, PDF (2/8 Pages) Cystech Electonics Corp. – High Current Gain Medium Power NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C857N3
Issued Date : 2012.01.02
Revised Date :
Page No. : 2/8
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VCE(sat)
*RCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Ron
Min.
30
20
12
-
-
-
-
-
-
1200
900
-
-
-
Typ.
Max.
Unit Test Conditions
-
-
V
IC=100μA, IE=0
-
-
V
IC=1mA, IB=0
-
-
V
IE=10μA, IC=0
-
100
nA VCB=30V, IE=0
-
100
nA VEB=12V, IC=0
35
100
mV IC=100mA, IB=10mA
0.16
0.3
V
IC=500mA, IB=20mA
0.32
0.6
Ω
IC=500mA, IB=20mA
0.79
1
V
IC=100mA, IB=10mA
-
2700
-
VCE=3V, IC=10mA
-
-
-
VCE=3V, IC=100mA
300
-
MHz VCE=10V, IC=50mA, f=100MHz
9
-
pF VCB=10V, f=1MHz
0.8
-
Ω IB=1mA, Vi=100mV(rms), f=1KHz
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
BTD2114N3
Package
SOT-23
(Pb-free and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Marking
BBW
BTD2114N3
CYStek Product Specification