BTD2114N3 Datasheet, PDF (3/8 Pages) Cystech Electonics Corp. – High Current Gain Medium Power NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Typical Characteristics
Spec. No. : C857N3
Issued Date : 2012.01.02
Revised Date :
Page No. : 3/8
Emitter Grounded Output Characteristics
3
2uA
2.5
2
1.5
1
0.5
0
0
1uA
0.8uA
0.6uA
0.4uA
IB=0.2uA
0.2
0.4
0.6
Collector-to-Emitter Voltage---VCE(V)
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
Emitter Grounded Output Characteristics
1mA
500uA
400uA
300uA
200uA
IB=100uA
2
4
6
8
10
Collector-to-Emitter Voltage---VCE(V)
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
Emitter Grounded Output Characteristics
2mA
0.6mA
0.4mA
0.2mA
2
4
6
8
10
Collector-to-Emitter Voltage---VCE(V)
1000
On Voltage vs Collector Current
VCE=3V
-25℃
25℃
75℃
100℃
125℃
100
1
10
100
Collector Current---IC(mA)
1000
10000
Current Gain vs Collector Current
10000
Current Gain vs Collector Current
VCE=3V
1000
100
1
VCE=5V
VCE=3V
VCE=1V
10
100
1000
Collector Current---IC(mA)
1000
100
1
125℃
100℃
75℃
25℃
-25℃
10
100
Collector Current---IC(mA)
1000
BTD2114N3
CYStek Product Specification