BTD2114N3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – High Current Gain Medium Power NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C857N3
Issued Date : 2012.01.02
Revised Date :
Page No. : 1/8
High Current Gain Medium Power NPN Epitaxial Planar Transistor
AUDIO MUTING APPLICATION
BTD2114N3
BVCEO
IC
RCE(SAT)
20V
500mA
0.32Ω(typ)
Features
• High Emitter-Base voltage, VEBO=12V(min).
• High DC current gain, hFE=1200(min.) @VCE=3V, IC=10mA.
• Low VCESAT, VCESAT=0.16V typ. @ IC=500mA, IB=20mA.
• Pb-free and halogen-free package.
Symbol
BTD2114N3
Outline
SOT-23
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating Junction and Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PD
RθJA
Tj ; Tstg
Limit
30
20
12
500
1
50
225
556
-55~+150
Unit
V
V
V
mA
A
mA
mW
°C/W
°C
BTD2114N3
CYStek Product Specification