BTC2881L3 Datasheet, PDF (4/7 Pages) Cystech Electonics Corp. – General Purpose NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C316L3
Issued Date : 2010.12.29
Revised Date : 2011.01.03
Page No. : 4/7
Typical Characteristics(Cont.)
10000
Saturation Voltage vs Collector Current
VBESAT@IC=10IB
10000
On Voltage vs Collector Current
1000
1000
VCE=5V
VCE=2V
100
1
10
100
Collector Current---IC(mA)
1000
Transition Frequency vs Collector Current
1000
VCE=5V
100
10
1
10
100
1000
Collector Current---IC(mA)
Power Derating Curve
1.2
1
0.8
0.6
0.4
0.2
0
0
50
100
150
200
Ambient Temperature---TA(℃)
100
1
10
100
Collector Current---IC(mA)
Typical Capacitance Characteristics
1000
Cib
100
Cob
10
fT=1MHz
1
0.1
1
10
Reverse-Biased Voltage---(V)
Power Derating Curve
7
6
5
4
3
2
1
0
0
50
100
150
Case Temperature---TC(℃)
1000
100
200
BTC2881L3
CYStek Product Specification