BTC2881L3 Datasheet, PDF (2/7 Pages) Cystech Electonics Corp. – General Purpose NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C316L3
Issued Date : 2010.12.29
Revised Date : 2011.01.03
Page No. : 2/7
Thermal Data
Parameter
Thermal Resistance, Junction-to-ambient, max
Thermal Resistance, Junction-to-case, max
Symbol
Rth,j-a
Rth,j-c
Value
125
20.8
Unit
°C/W
°C/W
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VCE(sat)
*VBE(sat)
*VBE(on)
*hFE 1
*hFE 2
*hFE 3
fT
Cob
Min.
300
200
6
-
-
-
-
-
-
120
120
30
-
-
Typ.
-
-
-
-
-
0.17
0.37
0.85
0.81
-
-
-
120
8
Max.
-
-
-
100
100
0.4
0.6
1
1
-
320
-
-
15
Unit
V
V
V
nA
nA
V
V
V
V
-
-
-
MHz
pF
Test Conditions
IC=100μA
IC=1mA
IE=10μA
VCB=300V
VEB=6V
IC=500mA, IB=50mA
IC=700mA, IB=35mA
IC=500mA, IB=50mA
VCE=5V, IC=500mA
VCE=5V, IC=50mA
VCE=5V, IC=100mA
VCE=5V, IC=700mA
VCE=5V, IC=100mA
VCB=10V, IE=0A,f=1MHz
*Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%
Recommended soldering footprint
BTC2881L3
CYStek Product Specification