BTC2881L3 Datasheet, PDF (3/7 Pages) Cystech Electonics Corp. – General Purpose NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Typical Characteristics
Spec. No. : C316L3
Issued Date : 2010.12.29
Revised Date : 2011.01.03
Page No. : 3/7
0.25
0.2
0.15
0.1
0.05
0
0
Emitter Grounded Output Characteristics
1mA
500uA
400uA
300uA
200uA
IB=100uA
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
0.5
0.45
0.4
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
0
Emitter Grounded Output Characteristics
5mA
2.5mA
2mA
1.5mA
1mA
IB=500uA
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
Emitter Grounded Output Characteristics
1
20mA
0.8
10mA
0.6
8mA
6mA
0.4
4mA
IB=2mA
0.2
0
0
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
1.2
1
0.8
0.6
0.4
0.2
0
0
Emitter Grounded Output Characteristics
50mA
20mA
15mA
10mA
IB=5mA
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
Current Gain vs Collector Current
1000
VCE=10V
Saturation Voltage vs Collector Current
1000
100
10
1
VCE=1V
VCE=2V
10
100
Collector Current---IC(mA)
VCESAT=20IB
100
10
1000
1
IC=10IB
10
100
Collector Current---IC(mA)
1000
BTC2881L3
CYStek Product Specification