BTC2881L3 Datasheet, PDF (1/7 Pages) Cystech Electonics Corp. – General Purpose NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTC2881L3
BVCEO
IC
RCESAT(MAX)
Spec. No. : C316L3
Issued Date : 2010.12.29
Revised Date : 2011.01.03
Page No. : 1/7
200V
1A
0.86Ω
Features
• High breakdown voltage, BVCEO≥ 200V
• Large continuous collector current capability
• Low collector saturation voltage
• Pb-free lead plating and halogen-free package
Symbol
BTC2881L3
Outline
SOT-223
B：Base
C：Collector
E：Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation @TA=25℃
Power Dissipation @TC=25℃
Operating Junction and Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
IB
PD
Tj ; Tstg
Limits
Unit
300
V
200
V
6
V
1
A
0.2
A
1
W
6
W
150
°C
Ordering Information
Device
BTC2881L3
Package
SOT-223
(Pb-free lead plating and halogen-free package)
BTC2881L3
Shipping
2500 pcs / Tape & Reel
CYStek Product Specification