BTB9435J3 Datasheet, PDF (4/8 Pages) Cystech Electonics Corp. – Low Vcesat PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C809J3
Issued Date : 2008.06.12
Revised Date: 2014.03.25
Page:4/8
Typical Characteristics(Cont.)
10000
Saturation Voltage vs Collector Current
10000
On Voltage vs Collector Current
1000
VBESAT@IC=10IB
1000
VBEON@VCE=2V
100
1
1000
10
100
1000
Collector Current---IC(mA)
10000
Capacitance vs Reverse-biased Voltage
100
1
10
100
1000
Collector Current---IC(mA)
10000
Transition Frequency vs Collector Current
1000
VCE=5V
Cib
100
100
Cob
10
0.1
1
10
100
Reverse-biased Voltage---VR(V)
Power Derating Curve
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
50
100
150
200
Ambient Temperature---TA(℃)
BTB9435J3
10
1
12
10
8
6
4
2
0
0
10
100
Collector Current---IC(mA)
1000
Power Derating Curve
50
100
150
200
Case Temperature---TC(℃)
CYStek Product Specification