BTB9435J3 Datasheet, PDF (2/8 Pages) Cystech Electonics Corp. – Low Vcesat PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C809J3
Issued Date : 2008.06.12
Revised Date: 2014.03.25
Page:2/8
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Power Dissipation
TA=25℃
TC=25℃
Operating Junction and Storage Temperature Range
Note : *1. Single Pulse Pw≦300μs,Duty≦2%.
Symbol
VCBO
VCEO
VEBO
IC
PD
Tj ; Tstg
Limit
Unit
-40
V
-32
V
-6
V
-3
A
-5 *1
A
1.5
W
10
-55~+150
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
RθJC
RθJA
Value
12.5
83.3
Unit
°C/W
°C/W
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
*VCE(sat)
*VCE(sat)
*VCE(sat)
*VCE(sat)
*VBE(sat)
*VBE(on)
*hFE 1
*hFE 2
*hFE 3
fT
Cob
Min.
Typ.
-40
-
-32
-
-6
-
-
-
-
-
-
-
-
-0.23
-
-0.32
-
-0.44
-
-0.6
-
-1.12
-
-0.93
180
-
160
-
30
-
-
180
-
20
Max.
-
-
-
-1
-1
-100
-0.45
-0.55
-0.6
-0.85
-1.5
-1.2
390
-
-
-
-
Unit
V
V
V
μA
μA
nA
V
V
V
V
V
V
-
-
-
MHz
pF
Test Conditions
IC=-50μA, IE=0
IC=-1mA, IB=0
IE=-50μA, IC=0
VCB=-40V, IE=0
VCE=-20V, IE=0
VEB=-5V, IC=0
IC=-800mA, IB=-20mA
IC=-1.2A, IB=-20mA
IC=-2A, IB=-200mA
IC=-3A, IB=-300mA
IC=-3A, IB=-300mA
VCE=-4V, IC=-1.2A
VCE=-1V, IC=-500mA
VCE=-1V, IC=-1.2A
VCE=-1V, IC=-3A
VCE=-5V, IE=-0.1A, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
BTB9435J3
CYStek Product Specification