BTB9435J3 Datasheet, PDF (3/8 Pages) Cystech Electonics Corp. – Low Vcesat PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Typical Characteristics
Spec. No. : C809J3
Issued Date : 2008.06.12
Revised Date: 2014.03.25
Page:3/8
0.4
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
0
Emitter Grounded Output Characteristics
1mA
500uA
400uA
300uA
200uA
IB=100uA
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
Emitter Grounded Output Characteristics
4
20mA
3
2
1
0
0
1000
10mA
8mA
6mA
4mA
IB=2mA
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
Current Gain vs Collector Current
VCE=5V
100
VCE=2V
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
10000
Emitter Grounded Output Characteristics
5mA
2.5mA
2mA
1.5mA
1mA
IB=500uA
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
Emitter Grounded Output Characteristics
50mA
20mA
15mA
10mA
IB=5mA
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
Saturation Voltage vs Collector Current
1000
100
VCESAT@IC=50IB
10
1
VCE=1V
10
100
1000
Collector Current---IC(mA)
10000
10
1
1
VCESAT=20IB
VCESAT=10IB
10
100
1000
Collector Current---IC(mA)
10000
BTB9435J3
CYStek Product Specification