MTB09P03J3 Datasheet, PDF (2/9 Pages) Cystech Electonics Corp. – P-Channel Logic Level Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C808J3
Issued Date : 2010.01.18
Revised Date : 2013.12.26
Page No. : 2/9
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
-30
VGS
±20
V
Continuous Drain Current @ TC=25°C
ID
-75
Continuous Drain Current @ TC=100°C
Pulsed Drain Current *1
ID
-48
A
IDM
-160
Avalanche Current
IAS
-20
Avalanche Energy @ L=0.1mH, ID=-20A, RG=25Ω
EAS
20
mJ
Total Power Dissipation @TC=25℃
Total Power Dissipation @TC=100℃
93
Pd
W
50
Operating Junction and Storage Temperature Range
Tj, Tstg -55~+150
°C
100% UIS testing in condition of VD=-15V, L=0.1mH, VG=-10V, IL=-15A, Rated VDS=-30V P-Channel
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle ≤ 1%
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Thermal Resistance, Junction-to-ambient, max
Note : When mounted on the minimum pad size recommended (PCB mount).
Symbol
Rth,j-c
Rth,j-a
Rth,j-a
Value
1.34
50 (Note)
110
Unit
°C/W
°C/W
°C/W
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max. Unit Test Conditions
Static
BVDSS
-30
VGS(th)
-1
GFS *1
-
IGSS
-
IDSS
-
-
RDS(ON) *1
-
-
Dynamic
Qg *1, 2
-
Qgs *1, 2
-
Qgd *1, 2
-
td(ON) *1, 2
-
tr *1, 2
-
td(OFF) *1, 2
-
tf *1, 2
-
-
-
V VGS=0V, ID=-250μA
-1.5
-3
V VDS =VGS, ID=-250μA
37
-
S VDS =-5V, ID=-25A
-
±100
nA V_GS=±20, V_DS=0V
-
-
-1
-10
μA
VDS =-24V, VGS =0V
VDS =-24V, VGS =0V, Tj=125°C
8
9
mΩ ^{VGS =-10V, ID=-25A}
11
15
VGS =-4.5V, ID=-10A
56
-
7.9
-
nC ID=-25A, VDS=-15V, VGS=-10V
11.5
-
22
-
20
65
-
-
ns
VDS=-15V, ID=-1A, VGS=-10V,
RG=2.7Ω
12
-
MTB09P03J3
CYStek Product Specification