CY8C55_11 Datasheet, PDF (97/112 Pages) Cypress Semiconductor – Programmable System-on-Chip (PSoC®)

PRELIMINARY
PSoC^® 5: CY8C55 Family Datasheet
Figure 11-62. Clock to Output Performance
11.7 Memory
Specifications are valid for –40 °C ≤ T_A ≤ 85 °C and T_J ≤ 100 °C, except where noted. Specifications are valid for 1.71 V to 5.5 V,
except where noted.
11.7.1 Flash
Table 11-57. Flash DC Specifications
Parameter
Description
Erase and program voltage
Conditions
V_DDD pin
Min
Typ
Max
Units
1.71
–
5.5
V
Table 11-58. Flash AC Specifications
Parameter
Description
Conditions
Min
Typ
T_WRITE
T_ERASE
Row write time (erase + program)
Row erase time
Row program time
–
15
–
10
–
5
T_BULK
Bulk erase time (256 KB)
Sector erase time (16 KB)
–
–
–
–
Total device program time
(including JTAG or SWD and other
overhead
–
–
Flash data retention time, retention Average ambient temp.
20
–
period measured from last erase cycle T_A ≤ 55 °C, 100 K erase/program
cycles
–40 °C ≤ T_A ≤ 85 °C, 10 K
erase/program cycles
10
–
Max
Units
20
ms
13
ms
7
ms
320
ms
15
ms
20 Seconds
–
Years
–
Document Number: 001-66235 Rev. **
Page 97 of 112
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