W150 Datasheet, PDF (9/14 Pages) Cypress Semiconductor – 440BX AGPset Spread Spectrum Frequency Synthesizer

PRELIMINARY
W150
Absolute Maximum Ratings
Stresses greater than those listed in this table may cause per-
manent damage to the device. These represent a stress rating
only. Operation of the device at these or any other conditions
.
Parameter
Description
V_DD, V_IN
T_STG
T_B
T_A
ESD_PROT
Voltage on any pin with respect to GND
Storage Temperature
Ambient Temperature under Bias
Operating Temperature
Input ESD Protection
above those specified in the operating sections of this specifi-
cation is not implied. Maximum conditions for extended peri-
ods may affect reliability.
Rating
Unit
–0.5 to +7.0
V
–65 to +150
°C
–55 to +125
°C
0 to +70
°C
2 (min)
kV
DC Electrical Characteristics: T_A = 0°C to +70°C; V_DDQ3 = 3.3V±5%; V_DDQ2 = 2.5V±5%
Parameter
Description
Test Condition
Min.
Typ.
Supply Current
I_DD
3.3V Supply Current
CPU_F, 1:2= 100 MHz
320
Outputs Loaded^[3]
I_DD
2.5V Supply Current
CPU_F, 1:2= 100 MHz
40
Outputs Loaded^[3]
Logic Inputs
V_IL
Input Low Voltage
V_IH
Input High Voltage
I_IL
Input Low Current^[4]
I_IH
Input High Current^[4]
I_IL
Input Low Current (SEL100/66#)
I_IH
Input High Current (SEL100/66#)
Clock Outputs
GND – 0.3
2.0
V_OL
Output Low Voltage
I_OL = 1 mA
V_OH
Output High Voltage
I_OH = 1 mA
3.1
V_OH
Output High Voltage CPU_F, 1:2, IOAPIC I_OH = –1 mA
2.2
I_OL
Output Low Current CPU_F, 1:2
V_OL = 1.25V
60
73
PCI_F, PCI1:5
V_OL = 1.5V
96
110
IOAPIC0, IOAPIC_F V_OL = 1.25V
72
92
REF0:1
V_OL = 1.5V
61
71
48-MHz
V_OL = 1.5V
60
70
24-MHz
V_OL = 1.5V
60
70
SDRAM0:15, _F
V_OL = 1.5V
95
110
I_OH
Output High Current CPU_F, 1:2
V_OH = 1.25V
43
60
PCI_F, PCI1:5
V_OH = 1.5V
76
96
IOAPIC
V_OH = 1.25V
60
90
REF0:1
V_OH = 1.5V
50
60
48-MHz
V_OH = 1.5V
50
60
24-MHz
V_OH = 1.5V
50
60
SDRAM0:15, _F
V_OH = 1.5V
75
95
Notes:
3. All clock outputs loaded with 6" 60Ω traces with 22-pF capacitors.
4. W150 logic inputs have internal pull-up devices (not to full CMOS level). Logic input FS3 has an internal pull-down device.
Max. Unit
mA
mA
0.8
V
V_DD + 0.3 V
–25
µA
10
µA
–5
µA
+5
µA
50
mV
V
V
85
mA
130
mA
110
mA
80
mA
80
mA
80
mA
130
80
mA
120
mA
130
mA
72
mA
72
mA
72
mA
120
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