W40S11-02 Datasheet, PDF (8/11 Pages) Cypress Semiconductor – SDRAM Buffer - 2 DIMM (Mobile)

W40S11-02
Absolute Maximum Ratings
Stresses greater than those listed in this table may cause per-
manent damage to the device. These represent a stress rating
only. Operation of the device at these or any other conditions
above those specified in the operating sections of this specifi-
cation is not implied. Maximum conditions for extended peri-
ods may affect reliability.
Parameter
V_DD, V_IN
T_STG
T_A
T_B
Description
Voltage on any pin with respect to GND
Storage Temperature
Operating Temperature
Ambient Temperature under Bias
Rating
Unit
–0.5 to +7.0
V
–65 to +150
°C
0 to +70
°C
–55 to +125
°C
DC Electrical Characteristics: T_A = 0°C to +70°C, V_DD = 3.3V±5%
Parameter
Description
Test Condition/Comments
Min
Typ
I_DD
3.3V Supply Current
at 66 MHz
120
I_DD
3.3V Supply Current
at 100 MHz
185
I_{DD Tristate}
3.3V Supply Current in
5
Three-State
Logic Inputs
V_IL
Input Low Voltage
V_IH
Input High Voltage
I_ILEAK
Input Leakage Current, BUF_IN
I_ILEAK
Input Leakage Current^[3]
Logic Outputs (SDRAM0:9)^[4]
V_SS–0.3
2.0
–5
–20
V_OL
Output Low Voltage
V_OH
Output High Voltage
I_OL
Output Low Current
I_OH
Output High Current
Pin Capacitance/Inductance
I_OL = 1 mA
I_OH = –1 mA
V_OL = 1.5V
V_OH = 1.5V
3.1
70
110
65
100
C_IN
Input Pin Capacitance
C_OUT
Output Pin Capacitance
L_IN
Input Pin Inductance
Note:
3. OE, SDATA, and SCLOCK logic pins have a 250-kΩ internal pull-up resistor (V_DD – 0.8V).
4. All SDRAM outputs loaded by 6" transmission lines with 22-pF capacitors on ends.
Max
Unit
160
mA
220
mA
10
mA
0.8
V
V_DD+0.5
V
+5
µA
+5
µA
50
mV
V
185
mA
160
mA
5
pF
6
pF
7
nH
8