BCM89071A1CUBXGT Datasheet, PDF (46/69 Pages) Cypress Semiconductor – Single-Chip Automotive Grade Bluetooth Transceiver and Baseband Processor

BCM89071 Data Sheet
Electrostatic Discharge Specifications
Table 12: Digital I/O Characteristics (Cont.)
Characteristics
Symbol Minimum Typical Maximum Unit
Input capacitance
C_IN
–
–
0.4
pF
Note:
1. By default, the drive strength settings specified in this table are for 3.3V. To achieve the required drive
strength for a VDDIO of 2.5V or 1.8V, contact your Broadcom Field Applications Engineer (FAE).
Electrostatic Discharge Specifications
Extreme caution must be exercised to prevent electrostatic discharge (ESD) damage. Proper use of wrist and
heel grounding straps to discharge static electricity is required when handling these devices. Always store
unused material in its antistatic packaging.
Table 13: ESD Specifications
Type
Human Body Model
Machine Model
Charged Device
Model
Symbol
Conditions
ESD Rating
ESD_HAND_HBM Human body model contact discharge per 3.5
AEC-Q100-002
ESD_HAND_MM Machine model contact discharge per 150
AEC-Q100-003
ESD_HAND_CDM Charged device model contact discharge 500 (750V on
per AEC-Q100-011
corner pins)
Units
kV
V
V
Note: All of the ESD tests were done using an interposer package.
Pad Name
COEX_OUT0
COEX_OUT1
COEX_IN
PCM_CLK
PCM_OUT
PCM_IN
PCM_SYNC
UART_RTS_N
UART_CTS_N
UART_RXD
UART_TXD
Table 14: Pad I/O Characteristics^a
I/O Pad Characteristics
Pull-Up/Pull-Down
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Fail-Safe
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Broadcom^®
April 16, 2015 • 89071-DS106-R
Baseband Transceiver and Baseband Processor
Page 45