IBIS4-1300_09 Datasheet, PDF (28/37 Pages) Cypress Semiconductor – 1.3 MPxl Rolling Shutter CMOS Image Sensor

Figure 26. Linear short exposure time
Figure 27. Double slope integration
IBIS4-1300
Electrical parameters
DC voltages
VDD and GND:
Nominal VDD-GND is 5V DC.
Overall current consumption for the different parts
• imager core + output amplifier analog
• imager core digital
• ADC analog
• ADC digital
Are quoted in the datasheets
The sensor works properly when using a 7805 type of
regulator.
Decoupling VDD to GND must happen close to the IC.
Other applied DC voltages
Should be clean as the VDD. Can be derived by resistive
division of VDD-GND, and decoupled to VDD or GND (as
indicated)
External Resistors
Are used as current mirror settings. Should be decoupled to
the opposite rail voltage as the connection of the resistor (thus:
if the resistor is tied to VDD, the capacitor is tied to GND). In
practice the decoupling can be omitted for almost all signals -
to be experimented.
Input / output
Digital inputs:
Clean rail to rail CMOS levels. 10%-90% rise and fall times
between 10 ns and 40 ns
Digital outputs:
Deliver CMOS level, able to drive 40 pF capacitive loads
Analog output of imager core
Designed to drive a 40 pF capacitive load
Analog input of ADC
Is equivalent to a capacitive load of typ. 15 pF.
Document Number: 38-05707 Rev. *B
Page 28 of 37