STAR1000_11 Datasheet, PDF (1/24 Pages) Cypress Semiconductor – 1M Pixel Radiation Hard CMOS Image Sensor

STAR1000
1M Pixel Radiation Hard CMOS
Image Sensor
Features
The STAR1000 sensor has the following characteristics:
■ Integrating 3-transistor Active Pixel Sensor
■ 1024 by 1024 pixels on 15 mm pitch
■ Radiation tolerant design
■ On-chip double sampling circuit to cancel Fixed Pattern Noise
■ Electronic shutter
■ Read out rate: up to 11 full frames per second
■ Region of Interest (ROI) windowing
■ On-chip 10-bit ADC
■ Programmable gain amplifier
■ Ceramic JLCC-84 package
■ Available with BK7G18 glass and with N2 filled cavity
Sensor Description
The STAR1000 is a CMOS image sensor with 1024 by 1024
pixels on a 15 mm pitch. It features on-chip Fixed Pattern Noise
(FPN) correction, a programmable gain amplifier, and a 10-bit
Analog-to-Digital Converter (ADC).
All circuits are designed using the radiation tolerant design rules
for CMOS image sensors, to allow high tolerance against total
dose effects.
Registers that are directly accessed by the external controller
contain the X- and Y- addresses of the pixels to be read. This
architecture provides flexible operation and allows different
Ordering Information
operation modes such as (multiple) windowing, subsampling,
and so on.
The CYIS1SM1000AA-HHC has a BK7G18 glass lid, and the
cavity is filled with N₂ which increases the temperature operating
range. The CYIS1SM1000AA-HHCS is similar to the
CYIS1SM1000AA-HHC; it has a BK7G18 glass lid and a N₂ filled
cavity, but is also screened and tested to space qualified device
standards.
Marketing Part Number
CYIS1SM1000AA-HHC
CYIS1SM1000AA-HHCS
Description
Mono with BK7G18 Glass
Mono with BK7G18 Glass, Space Qualified
Package
84 pin JLCC
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 38-05714 Rev. *F
• San Jose, CA 95134-1709 • 408-943-2600
Revised January 25, 2011
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