DS-72-34 Datasheet, PDF (6/18 Pages) Cymbet Corporation – I2C Real-Time Clock/Calendar with Integrated Backup Power

Preliminary
CBC34803 EnerChip™ RTC
CHARGE PUMP CHARACTERISTICS (PERTAINS TO INTEGRATED CBC910 POWER MANAGEMENT CIRCUIT)
VDD = 2.5V to 5.5V, Ta = -20ºC to +70ºC
CHARACTERISTIC
ENABLE=VDD to Charge
Pump Active
ENABLE Falling to
Charge Pump Inactive
Charge Pump Frequency
Charge Pump
Resistance
VCHG Output Voltage
VCHG Temp. Coefficient
Charge Pump Current
Drive
Charge Pump on Voltage
(1) _{fCP = 1/tCPPER}
SYMBOL
tCPON
tCPOFF
fCP
RCP
VCP
TCCP
ICP
VENABLE
CONDITION
ENABLE to 3rd charge pump
pulse, VDD=3.3V
-
Delta VBAT, for IBAT charging
current of 1µA to 100µA
CFLY=0.1µF, CBAT=1.0µF
CFLY=0.1µF, CBAT=1.0µF,
IOUT=1µA, Temp=+25ºC
IOUT=1µA, Temp=+25ºC
IBAT=1mA
CFLY=0.1µF, CBAT=1.0µF
ENABLE=VDD
MIN
60
0
-
150
MAX
80
UNITS
µs
1
µs
120
KHz ⁽¹⁾
300
Ω
4.065 4.150
V
-2.0
-2.4 mV/ºC
1.0
-
mA
2.5
-
V
ADDITIONAL CHARACTERISTICS
Ta = -20ºC to +70ºC
CHARACTERISTIC SYMBOL
CONDITION
LIMITS
MIN MAX
VBAT Cutoff Threshold
VBATCO
IOUT=1µA
2.75 3.25
Cutoff Temp. Coefficient
TCCO
-
+1
+2
VBAT Cutoff Delay Time
tCOOFF
VBAT from 40mV above to
20mV below VBATCO
IOUT=1µA
18
-
Note: All specifications contained within this document are subject to change without notice
UNITS
V
mV/ºC
ms
©2014-2015 Cymbet Corporation • Tel: [phone] • www.cymbet.com
DS-72-34 V.20

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