CT2312-R3 Datasheet, PDF (4/11 Pages) CT Micro International Corporation – N-Channel Enhancement MOSFET

CT2312-R3
N-Channel Enhancement MOSFET
Drain-Source Diode Characteristics
Symbol
Parameters
VSD
Body Diode Forward Voltage
ISD
Body Diode Continuous Current
Test Conditions
VGS = 0V, ISD = 4.5A
Note:
℃ 1. The power dissipation is limited by 150 junction temperature.
2. Device mounted on a glass-epoxy board
Min
Typ
Max Units Notes
1.2
V
4.5
A
1
FR-4
25.4 × 25.4 mm .
2 Oz Copper
Actual Size
3. The data tested by pulsed , pulse width ≦ 300µs , duty cycle ≦ 2%
4. Thermal Resistance follow JESD51-3.
CT Micro
Proprietary & Confidential
Page 4
Rev 4
Jun, 2015