CT2312-R3 Datasheet, PDF (3/11 Pages) CT Micro International Corporation – N-Channel Enhancement MOSFET

CT2312-R3
N-Channel Enhancement MOSFET
Electrical Characteristics TA = 25°C (unless otherwise specified)
Static Characteristics
Symbol
Parameters
BVDSS Drain-Source Breakdown Voltage
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
Test Conditions
VGS=0V, ID= 250µA
VDS = 20V, VGS = 0V
VGS = ±8V, VDS = 0V
Min Typ Max Units Notes
20
-
-
V
-
-
1
µA
-
-
±100
nA
On Characteristics
Symbol
Parameters
RDS(ON)
Drain-Source On-Resistance
VGS(TH) Gate-Source Threshold Voltage
Test Conditions
VGS = 4.5V, ID = 4.5A
VGS = 2.5V, ID = 4.0A
VGS = VDS, ID =250µA
Min
Typ
Max Units Notes
-
22
33
mΩ
Fig 4
-
27
40
mΩ
0.4
-
1.0
V
Fig 5
Dynamic Characteristics
Symbol
Parameters
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
Test Conditions
VDS = 8V ,
VGS = 0V,
f=1MHz
Min
Typ
Max Units Notes
-
599
-
-
81
-
pF
Fig 3
-
73
-
Switching Characteristics
Symbol
Parameters
TD(ON)
Turn-On Delay Time
TR
Rise Time
TD(OFF)
Turn-Off Delay Time
TF
Fall Time
QG
Total Gate Charge
QGS
Gate-Source Charge
QGD
Gate-Drain (Miller) Charge
Test Conditions
VDS = 10V , VGS = 4.5V,
RG = 6Ω, ID =1A
VDS = 10V , VGS = 4.5V,
ID = 4.5A
Min
Typ
Max Units Notes
-
3.5
-
-
23
-
Fig
ns
-
39
-
11 & 12
-
24
-
7.5
-
Fig
-
1
-
nC
9 & 10
-
2
-
CT Micro
Proprietary & Confidential
Page 3
Rev 4
Jun, 2015