CT2312-R3 Datasheet, PDF (2/11 Pages) CT Micro International Corporation – N-Channel Enhancement MOSFET

CT2312-R3
N-Channel Enhancement MOSFET
Absolute Maximum Rating at 25^oC
Symbol
Parameters
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID
℃ Continuous Drain Current @TA=25
IDM
Pulsed Drain Current
PD
℃ Total Power Dissipation @TA=25
TSTG
Storage Temperature Range
TJ
Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameters
RÓ¨JA
Thermal Resistance
Junction-Ambient (t=10s)
Test Conditions
Ratings
20
±8
4.5
13.5
1.25
-55 to 150
-55 to 150
Units
V
V
A
A
W
o_C
o_C
Notes
1
1
2
Min Typ Max Units Notes
-
175
-
o_{C /W}
1,4
CT Micro
Proprietary & Confidential
Page 2
Rev 4
Jun, 2015