CT2312-R3 Datasheet, PDF (1/11 Pages) CT Micro International Corporation – N-Channel Enhancement MOSFET

CT2312-R3
N-Channel Enhancement MOSFET
Features
• Drain-Source Breakdown Voltage VDSS 20 V
• Drain-Source On-Resistance
RDS(ON) 22mΩ, at VGS= 4.5V, IDS= 4.5A
RDS(ON) 27mΩ, at VGS= 2.5V, IDS= 4.0A
℃ • Continuous Drain Current at TA=25 ID = 4.5A
• Advanced high cell density Trench Technology
• RoHS Compliance & Halogen Free
Applications
• Power Management
• Portable Equipment
• Load Switch
• DSC
Description
The CT2312-R3 uses high performance Trench
Technology to provide excellent RDS(ON) and low gate
charge which is suitable for most of the synchronous
buck converter applications .
Package Outline
Schematic
Drain
Drain
Gate
Source
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 4
Jun, 2015