CMF10120D Datasheet, PDF (6/9 Pages) Cree, Inc – Silicon Carbide Power MOSFET

Typical Performance
350
300
V_GS = 0/20V
R_G = 15 Ω Tot
250
V_DD = 800V
L = 856 µH
FWD: C4D05120A
200
T_A = 25^oC
E_TOT,SW
150
E_OFF
100
E_ON
50
0
4
5
6
7
8
9
10
11
Peak Drain Current (A)
Figure 18. Clamped Inductive Switching Energy vs.
Drain Current (Fig. 20)
450
400
E_TOT,SW
350
300
250
E_ON
200
150
100
50
0
0
E_OFF
25
V_GS = 0/20V
R_G = 20 Ω Tot
V_DD = 800V
L = 856 µH
FWD: C4D05120A
I_D = 10 A
50
75
100
125
150
T_J (^oC)
Figure 19. Clamped Inductive Switching Energy vs.
Junction Temperature (Fig 20)
+
800V
-
42.3μf
856μH
C4D05120A
5A, 1200V
SiC Schottky
CMF10120D
Figure 20. Clamped Inductive Switching Waveform Test
Circuit
V_DS
90%
V_GS
t_d(on)v
t_fv
t_on
t_d(off)v
t_rv
t_off
10%
Figure 21. Switching Test Waveforms for Transition times
6
CMF10120D Rev. A