CMF10120D Datasheet, PDF (5/9 Pages) Cree, Inc – Silicon Carbide Power MOSFET

Typical Performance
10000
C_iss
1000
C_oss
100
C_rss
10
10000
1000
100
10
C_iss
C_oss
C_rss
1
0
20
40
60
80
100
120
140
160
180
200
V_DS (V)
1
0
100
200
300
400
500
600
700
800
V_DS (V)
Figure 13A and 13B. Typical Capacitances vs. Drain Voltage at V_GS = 0V and f = 1 MHz
40
35
30
25
20
15
10
5
0
0
100
200
300
400
500
600
700
800
V_DS (V)
Figure 14. Typical C_OSS Stored Energy
11
10
9
8
7
6
5
4
3
2
1
0
0
V_GS = 0/20V
V_DD = 50V
L = 20 mH
E_AS = 1.2 J
I_D
0.001
0.002
0.003
Time (sec)
0.004
0.005
2500
V_DS
2000
1500
1000
500
0
0.006
Figure 15. Typical Unclamped Inductive Switching
Waveforms Showing Avalanche Capability
80
70
60
50
40
30
20
10
0
0
V_GS = 0/20V
V_DD = 400V
R_L = 40 Ω
I_D = 10 A
T_A = 25^oC
t_D(off)v
t_rv
t_fv
t_D(on)v
5
10
15
20
25
External Gate Resistor (Ω)
Figure 16. Resistive Switching Times vs.
External R_G at V_DD = 400V, I_D = 10A
90
80
V_GS = 0/20V
V_DD =800V
70
R_L = 80 Ω
I_D = 10 A
T_A = 25^oC
60
50
t_D(off)v
t_rv
t_fv
40
30
20
t_D(on)v
10
0
0
5
10
15
20
25
External Gate Resistor (Ω)
Figure 17. Resistive Switching Times vs.
External R_G at V_DD = 800V, I_D = 10A
5
CMF10120D Rev. A