CMF10120D Datasheet, PDF (4/9 Pages) Cree, Inc – Silicon Carbide Power MOSFET

Typical Performance
1
DC:
0.5
0.3
100E-3
0.1
0.05
0.02
10E-3
0.01
1E-3
SinglePulse
100E-6
1E-6
10E-6
100E-6
1E-3
10E-3
100E-3
1
t_p (s)
Figure 7. Transient Thermal Impedance (Junction - Case)
with Duty Cycle
160
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
T_C (^oC)
Figure 9. Power Dissipation Derating Curve
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
-75
I_D = 1 mA
I_D = 0.5 mA
-50
-25
0
25
50
75
100
125
150
T_J (^oC)
Figure 11. Gate Threshold Voltage vs.
Temperature
100
Limited
by R_DS(on)
10
t_p ≤ 1 µs
t_p = 10 µs
t_p = 100 µs
1
0.1
1
25
t_p = 1 ms
t_p = 10 ms
DC
10
100
V_DS (V)
1000
Figure 8. Safe Operating Area
20
15
10
5
0
0
25
50
75
100
125
150
T_C (^oC)
Figure 10. Continuous Current Derating Curve
25
20
15
10
I_D = 10 A
V_DD = 800 V
5
0
-5
0
10
20
30
40
50
Gate Charge (nC)
Figure 12. Typical Gate Charge Characteristics
(25°C)
4
CMF10120D Rev. A