CMF10120D Datasheet, PDF (1/9 Pages) Cree, Inc – Silicon Carbide Power MOSFET

CMF10120D-Silicon Carbide Power MOSFET
Z-F MOSFET eT^TM
V_DS
= 1200 V
N-Channel Enhancement Mode ^{ID (MAX) = 2 4 A}
R_DS(on)
= 160mΩ
Features
Package
• High Speed Switching with Low Capacitances
• High Blocking Voltage with Low R_DS(on)
• Easy to Parallel and Simple to Drive
• Avalanche Ruggedness
• Resistant to Latch-Up
• Halogen Free, RoHS Compliant
Benefits
TO-247-3
• Higher System Efficiency
• Reduced Cooling Requirements
• Increased System Switching Frequency
Applications
• Solar Inverters
• High Voltage DC/DC Converters
• Motor Drives
• Switch Mode Power Supplies
Maximum Ratings (T_C = 25˚C unless otherwise specified)
Part Number
CMF10120D
Package
TO-247-3
Symbol
Parameter
Value Unit
Test Conditions
Note
I_D
Continuous Drain Current
I_Dpulse Pulsed Drain Current
E_AS
Single Pulse Avalanche Energy
E_AR
Repetitive Avalanche Energy
24
V_GS@20V, T_C = 25˚C
A
13
V_GS@20V, T_C = 100˚C
Fig. 10
49
A ^{Pulse width tP limited by Tjmax}
T_C = 25˚C
1.2
J _{ID = 10A, VDD = 50 V,}
L = 20 mH
0.8
J tAR limited by Tjmax
Fig. 15
I_AR
Repetitive Avalanche Current
V_GS Gate Source Voltage
10
-5/+25
A ^{ID = 10A, VDD = 50 V, L = 15 mH}
t_AR limited by Tjmax
V
P_tot
Power Dissipation
T_J , T_stg Operating Junction and Storage Temperature
T_L
Solder Temperature
M_d
Mounting Torque
134
-55 to
+135
260
1
8.8
W T_C=25˚C
˚C
Fig. 9
˚C 1.6mm (0.063”) from case for 10s
Nm
lbf-in
M3 or 6-32 screw
1
CMF10120D Rev. A