CMPA0060002D Datasheet, PDF (5/7 Pages) Cree, Inc – 2 Watt, 20 MHz - 6000 MHz GaN HEMT MMIC Power Amplifier

External Termination Reference Design
The following is a plot of the gain of the die only.
Die only
30
28
26
S21 (Die Only)
24
22
20
18
16
14
12
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Frequency (GHz)
Notes:
1 _{An off chip termination is needed to reduce the high gain peak at low frequencies.}
2 _{The off chip termination should be designed to minimize the impact on the MMIC’s performance at higher}
frequencies.
LRC Reference Circuit
The Drain and Gate circuit use the same L and C components but different values for the resistor.
Figure 2.
The Drain resistor needs to be dimensioned to handle 3 W of RF dissipation for the lowest frequencies while the Gate
resistor needs to handle 0.5 W. The suppliers of the SMT components are:
L1 = 47 nH, CoilCraft PN: 0402CS –47NXJB
C1 = 470 pf Murata PN: GRM1885C2A471A01D
Copyright © 2009-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
5
CMPA0060002D Rev 1.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: [phone]
Fax: [phone].CREE
www.cree.com/wireless