CMPA0060002D Datasheet, PDF (3/7 Pages) Cree, Inc – 2 Watt, 20 MHz - 6000 MHz GaN HEMT MMIC Power Amplifier

Die Dimensions (units in microns)
Overall die size 4280 x 1670 (+0/-50) microns, die thickness 100 (+/-10) micron.
All Gate and Drain pads must be wire bonded for electrical connection.
Pad Number
Function
1
RF IN¹
2
Gate Termination
3
Drain Termination
4
RF OUT¹
Description
RF-Input pad. Matched to 50 ohm. Requires gate control from
an external bias –T from -2.3 V to -3.8 V.
Off Chip termination for the Gate. It needs to be DC-blocked .
Off Chip termination for the Drain. It needs to be DC-blocked.
RF-Output pad. Matched to 50 ohm. Requires Drain supply
from an external bias –T up to 26 V , 800 mA
Pad Size (microns)
200 x 150
200 x 150
200 x 150
200 x 150
Notes:
1 _{The RF In and Out pads have a ground-signal-ground configuration with a pitch of 1 mil (25 um)..}
Die Assembly Notes:
• Recommended solder is AuSn (80/20) solder. Refer to Cree’s website for the Eutectic Die Bond Procedure
application note at www.cree.com/wireless.
• Vacuum collet is the preferred method of pick-up.
• The backside of the die is the Source (ground) contact.
• Die back side gold plating is 5 microns thick minimum.
• Thermosonic ball or wedge bonding are the preferred connection methods.
• Gold wire must be used for connections.
• Use the die label (XX-YY) for correct orientation.
Copyright © 2009-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
3
CMPA0060002D Rev 1.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: [phone]
Fax: [phone].CREE
www.cree.com/wireless