CMPA0060002D Datasheet, PDF (4/7 Pages) Cree, Inc – 2 Watt, 20 MHz - 6000 MHz GaN HEMT MMIC Power Amplifier

Functional Block Diagram
This device employs a wideband, traveling wave amplifier topology. It has an internal termination for both
the Drain and the Gate, which works well over 2.5-6.0 GHz. For operation below 2.5 GHz an external termination is
required. This termination needs to be DC-blocked and suitable to withstand up to 3 W of RF power. (Refer to the
reference design section for the LF-termination in this data sheet for more details). The circuits also require external
wideband Bias –T’s to supply voltage to the Gate and Drain. The Bias-T at the Drain needs to be designed to handle 28
V and up to 800 mA.
Figure 1.
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CMPA0060002D Rev 1.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: [phone]
Fax: [phone].CREE
www.cree.com/wireless