CMPA0060002D Datasheet, PDF (1/7 Pages) Cree, Inc – 2 Watt, 20 MHz - 6000 MHz GaN HEMT MMIC Power Amplifier

CMPA0060002D
2 Watt, 20 MHz - 6000 MHz GaN HEMT MMIC Power Amplifier
Cree’s CMPA0060002D is a gallium nitride (GaN) High Electron
Mobility Transistor (HEMT) based monolithic microwave integrated
circuit (MMIC). GaN has superior properties compared to silicon
or gallium arsenide, including higher breakdown voltage,
higher saturated electron drift velocity and higher thermal
conductivity. GaN HEMTs also offer greater power density and
wider bandwidths compared to Si and GaAs transistors. This
MMIC employs a distributed (traveling-wave) amplifier design
approach, enabling extremely wide bandwidths to be achieved
in a small footprint.
PN: _CMPA0060002D
Typical Performance Over 0.5-6.0 GHz (T_C = 25˚C)
Parameter
Gain
Saturated Output Power @ P_IN 23 dBm
Power Gain @ P_IN 23 dBm
PAE @ P_IN 23 dBm
Note: V_DD = 28 V, I_D = 100 mA
0.5 GHz
18.7
7.0
15.4
43
1.0 GHz
17.4
6.3
15.0
40
2.5 GHz
17.6
5.7
14.5
36
4.0 GHz
17.4
4.3
13.3
28
6.0 GHz
17.6
3.6
12.5
31
Units
dB
W
dB
%
Features
Applications
• 17 dB Small Signal Gain
• 2 W Typical P_SAT
• Operation up to 28 V
• High Breakdown Voltage
• High Temperature Operation
• Size 0.169 x 0.066 x 0.004 inches
• Ultra Broadband Amplifiers
• Fiber Drivers
• Test Instrumentation
• EMC Amplifier Drivers
Subject to change without notice.
www.cree.com/wireless
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