CMPA1D1E030D Datasheet, PDF (4/6 Pages) Cree, Inc – 30 W, 13.75 - 14.5 GHz, 40 V, GaN MMIC, Power Amplifier

Die Dimensions (units in microns)
Overall die size 5000 x 6000 (+0/-50) microns, die thickness 100 (+/-10) microns.
All Gate and Drain pads must be wire bonded for electrical connection.
Pad Number
Function
Description
Pad Size (in) Note
1
RF_IN
RF-Input pad. Matched to 50 ohm
102x252
5
2
VG1A bottom Gate control for stage1. Vg = -2.0 to -3.5 V
3
VG1A top
Gate control for stage1. Vg = -2.0 to -3.5 V
4
VG2A bottom Gate control for stage2. Vg = -2.0 to -3.5 V
5
VG2A top
Gate control for stage2. Vg = -2.0 to -3.5 V
6
VD1 bottom
Drain control for stage1. Vd = 40 V
7
VD1 top
Drain control for stage1. Vd = 40 V
8
VD2 bottom
Drain control for stage2. Vd = 40 V
9
VD2 top
Drain control for stage2. Vd = 40 V
10
VG3A bottom Gate control for stage3. Vg = -2.0 to -3.5 V
11
VG3A top
Gate control for stage3. Vg = -2.0 to -3.5 V
12
VD3 bottom
Drain control for stage3. Vd = 40 V
13
VD3 top
Drain control for stage3. Vd = 40 V
14
RF_OUT
RF-Output pad. Matched to 50 ohm
128x125
1,2
128x125
1,2
128x125
1,2
128x125
1,2
128x125
1,3
128x125
1,3
128x125
1,4
128x125
1,4
128x125
1,2
128x125
1,2
328x125
1,4
328x125
1,4
102x302
5
Notes:
1 _{Attach bypass capacitor to pads 2-13 per aplications circuit}
2 _{VG1A&2A&3A top and bottom are connected internally, so it would be enough to connect either one for proper operation}
3 _{VD1 top and bottom are not connected internally and have to be biased from both sides for proper operation}
4 _{For current handling, it is recommended to bias VD2 and VD3 from both top and bottom sides}
5 _{The RF Input and Output pads have a ground-signal-ground with a nominal pitch of 10 mil (250 um). The RF ground pads are 102 x}
102 microns
Die Assembly Notes:
• Recommended solder is AuSn (80/20) solder. Refer to Cree’s website for the Eutectic Die Bond Procedure application note at
http://www.cree.com/~/media/Files/Cree/RF/Application%20Notes/Appnote%202%20Eutectic.pdf
• Vacuum collet is the preferred method of pick-up.
• The backside of the die is the Source (ground) contact.
• Die back side gold plating is 5 microns thick minimum.
• Thermosonic ball or wedge bonding are the preferred connection methods.
• Gold wire must be used for connections.
• Use the die label (XX-YY) for correct orientation.
Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective
owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
4
CMPA1D1E030D Rev 0, Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: [phone]
Fax: [phone]
Fax: [phone]
www.cree.com/RF