CMPA1D1E030D Datasheet, PDF (1/6 Pages) Cree, Inc – 30 W, 13.75 - 14.5 GHz, 40 V, GaN MMIC, Power Amplifier

PRELIMINARY
CMPA1D1E030D
30 W, 13.75 - 14.5 GHz, 40 V, GaN MMIC, Power Amplifier
Cree’s CMPA1D1E030D is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT) based monolithic microwave integrated circuit
(MMIC) on a silicon carbide substrate, using a 0.25 μm gate length
fabrication process. GaN-on-SiC has superior properties compared
to silicon, gallium arsenide or GaN-on-Si, including higher breakdown voltage,
higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer
greater power density and wider bandwidths compared to Si, GaAs, and GaN-on-Si transistors.
Typical Performance Over 13.75-14.5 GHz (T_C = 25˚C)
Parameter
13.75 GHz 14.0 GHz
Small Signal Gain
27
26
P_SAT @ P_IN = 26 dBm
P_3dB Backoff @ P_IN = 20 dBm
PAE @ P_IN = 26 dBm
PAE @ P_IN = 20 dBm
33
34
20
20
24
23
22
21
14.5 GHz
25
30
16
22
20
Note: All data in this table is based on fixtured, CW performance.
Units
dB
W
W
%
%
Features
• 27 dB Small Signal Gain
• 30 W Typical P_SAT
• Operation up to 40 V
• High Breakdown Voltage
• High Temperature Operation
Applications
• Satellite Communications Uplink
Subject to change without notice.
www.cree.com/rf
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