CMPA1D1E030D Datasheet, PDF (2/6 Pages) Cree, Inc – 30 W, 13.75 - 14.5 GHz, 40 V, GaN MMIC, Power Amplifier

Absolute Maximum Ratings (not simultaneous) at 25˚C
Parameter
Symbol
Rating
Units
Conditions
Drain-source Voltage
V_DSS
84
V_DC
25˚C
Gate-source Voltage
V_GS
-10, +2
V_DC
25˚C
Storage Temperature
T_STG
-55, +150
˚C
Operating Junction Temperature
T_J
225
˚C
Maximum Forward Gate Current
I_GMAX
10
mA
25˚C
Maximum Drain Current¹
I_DMAX
0.6
A
Stage 1, 25˚C
Maximum Drain Current¹
I_DMAX
0.96
A
Stage 2, 25˚C
Maximum Drain Current¹
I_DMAX
2.2
A
Stage 3, 25˚C
Thermal Resistance, Junction to Case²
R_θJC
1.5
˚C/W
85˚C, P_DISS = 94W
Mounting Temperature (30 seconds)
T_S
320
˚C
30 seconds
Note¹ Current limit for long term, reliable operation. Total current when biased from top and bottom drain pads.
Note² Eutectic die attach using 80/20 AuSn mounted to a 20 mil thick CuMoCu carrier.
Electrical Characteristics (Frequency = 13.75 GHz to 14.5 GHz unless otherwise stated; T_C = 25˚C)
Characteristics
DC Characteristics
Gate Threshold
Drain-Source Breakdown Voltage
RF Characteristics²
Small Signal Gain
Symbol
V_TH
V_BD
S21
Min.
-3.8
84
–
Typ.
-2.8
100
27
Max.
Units
-2.3
V
–
V
–
dB
Input Return Loss
S11
–
-16
–
dB
Output Return Loss
S22
–
-9
–
dB
Power Output
Power Output
Power Added Efficiency
Power Added Efficiency
Power Gain
P_OUT1
–
50
–
W
P_OUT2
–
24
–
W
PAE₁
–
30
–
%
PAE₂
–
25
–
%
G_P
–
22
–
dB
Output Mismatch Stress
VSWR
–
5:1
–
Y
Notes:
1 _{Scaled from PCM data.}
2 _{All data pulse tested on-wafer with Pulse Width = 10 μs, Duty Cycle = 0.1%.}
Conditions
V_DS = 10 V, I_D = 18.2 mA
V_GS = -8 V, I_D = 18.2 mA
V_DD = 40 V, I_DQ = 300 mA
V_DD = 40 V, I_DQ = 300 mA
V_DD = 40 V, I_DQ = 300 mA
V_DD = 40 V, I_DQ = 300 mA, CW, P_IN = 24 dBm
V_DD = 40 V, I_DQ = 300 mA, P_IN = 18 dBm
V_DD = 40 V, I_DQ = 300 mA, CW, P_IN = 24 dBm
V_DD = 40 V, I_DQ = 300 mA, P_IN = 18 dBm
V_DD = 40 V, I_DQ = 300 mA
No damage at all phase angles,
V_DD = 40 V, I_DQ = 300 mA, P_OUT = 25W CW
Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective
owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
2
CMPA1D1E030D Rev 0, Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: [phone]
Fax: [phone]
Fax: [phone]
www.cree.com/RF