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CAT25C64_06 Datasheet, PDF (7/16 Pages) Catalyst Semiconductor – 64K-Bit SPI Serial CMOS EEPROM
CAT25C64
READ Sequence
The part is selected by pulling CS low. The 8-bit read
instruction is transmitted to the CAT25C64, followed by
the 16-bit address(the three Most Significant Bits are
don’t care.
After the correct read instruction and address are sent,
the data stored in the memory at the selected address
is shifted out on the SO pin. The data stored in the
memory at the next address can be read sequentially
by continuing to provide clock pulses. The internal
address pointer is automatically incremented to the
next higher address after each byte of data is shifted
out. When the highest address (1FFFh) is reached, the
address counter rolls over to 0000h allowing the read
cycle to be continued indefinitely. The readoperation is
terminated by pulling the CS high.
To read the status register, RDSR instruction should be
sent. The contents of the status register are shifted out on
the SO line. The status register may be read at any time
even during a write cycle. Read sequece is illustrated in
Figure 4. Reading status register is illustrated in Figure 5.
WRITE Sequence
The CAT25C64 powers up in a Write Disable state. Prior to
any write instructions, the WREN instruction must be sent
to CAT25C64. The device goes into Write enable state by
pulling the CS low and then clocking the WREN instruction
into CAT25C64. The CS must be brought high after the
WREN instruction to enable writes to the device. If the write
operation is initiated immediately after the WREN instruc-
tion without CS being brought high, the data will not be
written to thearray because the write enable latch will not
have been properly set. Also, for a successful write opera-
tion the address of the memory location(s) to be pro-
grammed must be outside the protected address field
Figure 4. Read Instruction Timing
CS
SCK
SI
0 1 2 3 4 5 6 7 8 9 10 20 21 22 23 24 25 26 27 28 29 30
OPCODE
0000001 1
BYTE ADDRESS*
SO
HIGH IMPEDANCE
*Please check the instruction set table for address
Note: Dashed Line= mode (1, 1) — — — —
Figure 5. RDSR Instruction Timing
DATA OUT
7 6 5 432 1 0
MSB
CS
SCK
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14
OPCODE
SI
0
0
0
0
0
SO
HIGH IMPEDANCE
Note: Dashed Line= mode (1, 1) — — — —
1
0
1
DATA OUT
7
6
5
4
32
10
MSB
© 2006 by Catalyst Semiconductor, Inc.
7
Characteristics subject to change without notice
Doc. No. 1112, Rev. B