CAT28HT256 Datasheet, PDF (4/10 Pages) Catalyst Semiconductor – 256K-Bit CMOS PARALLEL E2PROM

CAT28HT256
Advanced
A.C. CHARACTERISTICS, Read Cycle
V_CC = 5V ±10%, unless otherwise specified. (Temperature 0˚C to 170˚C)
Symbol
Parameter
t_RC
Read Cycle Time
t_CE
CE Access Time
t_AA
Address Access Time
t_OE
OE Access Time
t_LZ(1)
CE Low to Active Output
t_OLZ(1) OE Low to Active Output
t_HZ(1)(4) CE High to High-Z Output
t_OHZ(1)(4) OE High to High-Z Output
t_OH(1) Output Hold from Address Change
28HT256-20 28HT256-25
Min. Max. Min. Max. Units
200
250
ns
200
250 ns
200
250 ns
80
100 ns
0
0
ns
0
0
ns
50
50 ns
50
50 ns
0
0
ns
A.C. CHARACTERISTICS, Write Cycle
VCC = 5V ±10%, unless otherwise specified. (Temperature 0˚C to 170˚C)
Symbol
Parameter
t_WC
Write Cycle Time
t_AS
Address Setup Time
t_AH
Address Hold Time
t_CS
CE Setup Time
t_CH
CE Hold Time
t_CW(2) CE Pulse Time
t_OES
OE Setup Time
t_OEH
OE Hold Time
t_WP(2) WE Pulse Width
t_DS
Data Setup Time
t_DH
Data Hold Time
t_INIT(1) Write Inhibit Period After Power-up
t_BLC(1)(3) Byte Load Cycle Time
28HT256-20 28HT256-25
Min. Max. Min. Max. Units
10
10 ms
0
0
ns
75
75
ns
0
0
ns
0
0
ns
100
100
ns
0
0
ns
0
0
ns
100
100
ns
50
50
ns
10
10
ns
5 10
5 10 ms
0.1 100 0.1 100 µs
Note:
(1) This parameter is tested intitially and after a design or process change that affects the parameter..
(2) A write pulse of less than 20ns duration will not initiate a write cycle.
(3) A timer of duration t_BLC max. begins with every LOW to HIGH transition of WE. If allowed to time out, a page or byte write will begin;
however a transition from HIGH to LOW within t_BLC max. stops the timer.
(4) Output floating (High-Z) is defined as the state when the external data line is no longer driven by the output buffer.
Stock No. 21065-03 2/98
8-94