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CAT93C76_07 Datasheet, PDF (3/13 Pages) Catalyst Semiconductor – 8K-Bit Microwire Serial EEPROM | |||
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CAT93C76 (Rev. A)
PIN CAPACITANCE(1)
Symbol
COUT
CIN
Test
Output Capacitance (DO)
Input Capacitance (CS, SK, DI, ORG)
Conditions
VOUT = 0V
VIN = 0V
Min Typ
Max
5
5
Units
pF
pF
INSTRUCTION SET(2)
Start
Instruction Bit Opcode
READ
1
10
ERASE
1
11
WRITE
1
01
EWEN
1
00
EWDS
1
00
ERAL
1
00
WRAL
1
00
Address
x8
x16
A10-A0
A9-A0
A10-A0
A9-A0
A10-A0
A9-A0
11XXXXXXXXX 11XXXXXXXX
00XXXXXXXXX 00XXXXXXXX
10XXXXXXXXX 10XXXXXXXX
01XXXXXXXXX 01XXXXXXXX
Data
x8
x16
D7-D0 D15-D0
D7-D0 D15-D0
Comments
Read Address ANâ A0
Clear Address ANâ A0
Write Address ANâ A0
Write Enable
Write Disable
Clear All Addresses
Write All Addresses
A.C. CHARACTERISTICS
Symbol
tCSS
tCSH
tDIS
tDIH
tPD1
tPD0
tHZ(1)
tEW
tCSMIN
tSKHI
tSKLOW
tSV
SKMAX
Parameter
CS Setup Time
CS Hold Time
DI Setup Time
DI Hold Time
Output Delay to 1
Output Delay to 0
Output Delay to High-Z
Program/Erase Pulse Width
Minimum CS Low Time
Minimum SK High Time
Minimum SK Low Time
Output Delay to Status Valid
Maximum Clock Frequency
Test
Conditions
CL = 100pF(3)
(1)(4)
POWER-UP TIMING
Symbol
tPUR
tPUW
Parameter
Power-up to Read Operation
Power-up to Write Operation
Limits
VCC = 1.8V - 2.5V VCC = 2.5V - 5.5V
Min
Max
Min
Max
100
50
0
0
100
50
100
50
250
150
250
150
150
100
5
5
200
150
250
150
250
150
250
100
DC
1000
DC 3000
Units
ns
ns
ns
ns
ns
ns
ns
ms
ns
ns
ns
ns
kHz
Max
Units
1
ms
1
ms
Notes:
(1) These parameters are tested initially and after a design or process change that affects the parameter.
(2) Address bit A10 for the 1,024x8 org. and A9 for the 512x16 org. are âdonât careâ bits, but must be kept at either a â1â or â0â for READ,
WRITE and ERASE commands.
(3) The input levels and timing reference points are shown in the âAC Test Conditionsâ table.
(4) tPUR and tPUW are the delays required from the time VCC is stable until the specified operation can be initiated.
© Catalyst Semiconductor, Inc.
3
Characteristics subject to change without notice
Doc. No. MD-1090 Rev. B
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