CAT24WC08W Datasheet, PDF (11/14 Pages) Catalyst Semiconductor – Serial EEPROM

8 LEAD MSOP (R, Z, GZ)
0.0150 0.38
0.0110 0.28
CAT24WC01/02/04/08/16
0.1970
0.1890
5.00
4.80
S
arts 0.0256 [0.65] BSC
d ^P _{0.0433 [1.10] MAX.}
0.1220 3.10
0.1142 2.90
0.0374 0.95
0.0295 0.75
e_{0.0059 0.15}
u ^{0.039 [0.10] MAX. S} 0.0020 0.05 ^S
ontin 0.0276 0.70
Disc ^{0.0157 0.40}
0.1220 3.10
0.1142 2.90
0˚ - 6˚
0.0150 0.38
0.0110 0.28
WITH PLATING
0.0091 0.23
0.0051 0.13
WITH PLATING
0.0050 [0.127]
0.0118 [0.30] REF.
BASE METAL
SECTION A - A
Notes:
(1) All dimensions are in mm Angles in degrees.
2 Does not include Mold Flash, Protrusion or Gate Burrs. Mold Flash, Protrusions or Gate Burrs shall not exceed 0.15 mm. per side.
3 Does not include Interlead Flash orProtrusion. Interlead Flash or Protrusion shall not exceed 0.25 mm per side.
4 Does not include Dambar Protrusion, allowable Dambar Protrusion shall be 0.08 mm.
(5) This part is compliant with JEDEC Specification MO-187 Variations AA.
(6) Lead span/stand off height/coplanarity are considered as special characteristics. (S)
(7) Controlling dimensions in inches. [mm]
© Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
11
Doc. No. 1022, Rev. O