DEMO-ATF-5X143 Datasheet, PDF (5/16 Pages) Broadcom Corporation. – Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package

ATF-54143 Typical Performance Curves, continued
2
45
25 C
-40 C
40
85 C
1.5
35
30
1.0
25
0.5
0
0
1
2
3
4
5
6
FREQUENCY (GHz)
Figure 15. Fmin^[2] vs. Frequency and Temp
Tuned for Max OIP3 and Fmin at 3V, 60 mA.
20
25 C
15
-40 C
85 C
10
0
1
2
3
4
5
6
FREQUENCY (GHz)
Figure 16. OIP3 vs. Frequency and Temp
Tuned for Max OIP3 and Fmin at 3V, 60 mA.
1.4
1.2
1.0
0.8
0.6
0.4
60 mA
40 mA
0.2
80 mA
0
01 2 3 4 5 67
FREQUENCY (GHz)
Figure 18. Fmin^[1] vs. Frequency and I_ds
at 3V.
21
20.5
20
19.5
19
18.5
18
25 C
17.5
-40 C
85 C
17
0
1
2
3
4
5
6
FREQUENCY (GHz)
Figure 17. P1dB vs. Frequency and Temp
Tuned for Max OIP3 and Fmin at 3V, 60 mA.
ATF-54143 Reflection Coefficient Parameters tuned for Maximum Output IP3, V_DS = 3V, I_DS = 60 mA
Freq
ΓOut_Mag.^[1]
ΓOut_Ang.^[2]
OIP3
P1dB
(GHz)
(Mag)
(Degrees)
(dBm)
(dBm)
0.9
0.017
115
35.54
18.4
2.0
0.026
-85
36.23
20.38
3.9
0.013
173
37.54
20.28
5.8
0.025
102
35.75
18.09
Note:
1. Gamma out is the reflection coefficient of the matching circuit presented to the output of the device.
2. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based
on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true
Fmin is calculated. Refer to the noise parameter application section for more information.
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