DEMO-ATF-5X143 Datasheet, PDF (2/16 Pages) Broadcom Corporation. – Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package

ATF-54143 Absolute Maximum Ratings ^[1]
Symbol
Parameter
V_DS
Drain - Source Voltage^[2]
V_GS
Gate - Source Voltage^[2]
V_GD
Gate Drain Voltage ^[2]
I_DS
Drain Current^[2]
P_diss
Total Power Dissipation^[3]
P_{in max.} (ON mode)
RF Input Power (Vds=3V, Ids=60mA)
P_{in max.} (OFF mode)
RF Input Power (Vd=0, Ids=0A)
I_GS
Gate Source Current
T_CH
Channel Temperature
T_STG
Storage Temperature
θ_jc
Thermal Resistance ^[4]
Notes:
120
1. Operation of this device in excess of any one of these parameters
may cause permanent damage.
100
2. Assumes DC quiescent conditions.
3. Source lead temperature is 25°C. Derate 6.2 mW/°C for T_L > 33°C.
80
4. Thermal resistance measured using 150°C Liquid Crystal Measure-
ment method.
60
5. The device can handle +20 dBm RF Input Power provided I_GS is
limited to 2 mA. I_GS at P_1dB drive level is bias circuit dependent.
40
See application section for additional information.
20
Units
V
V
V
mA
mW
dBm
dBm
mA
°C
°C
°C/W
0
0 12 3 45
V_DS (V)
Figure 1. Typical I-V Curves.
(V_GS = 0.1 V per step)
Absolute
Maximum
5
-5 to 1
-5 to 1
120
725
20 ^[5]
20
2^[5]
150
-65 to 150
162
0.7 V
0.6 V
0.5 V
0.4 V
0.3 V
67
Product Consistency Distribution Charts ^{[6, 7]}
160
120
-3 Std
80
40
Cpk = 0.77
Stdev = 1.41
200
160
120
-3 Std
80
40
160
Cpk = 1.35
Stdev = 0.4
120
+3 Std
80
40
Cpk = 1.67
Stdev = 0.073
+3 Std
0
30 32
34 36 38
OIP3 (dBm)
40 42
Figure 2. OIP3 @ 2 GHz, 3 V, 60 mA.
LSL = 33.0, Nominal = 36.575
0
14
15
16
17
18
19
GAIN (dB)
Figure 3. Gain @ 2 GHz, 3 V, 60 mA.
USL = 18.5, LSL = 15, Nominal = 16.6
0
0.25
0.45
0.65
0.85
1.05
NF (dB)
Figure 4. NF @ 2 GHz, 3 V, 60 mA.
USL = 0.9, Nominal = 0.49
Notes:
6. Distribution data sample size is 450 samples taken from 9 different wafers. Future wafers allocated to this product may have nominal values
anywhere between the upper and lower limits.
7. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match
based on production test equipment. Circuit losses have been de-embedded from actual measurements.
2