DEMO-ATF-5X143 Datasheet, PDF (3/16 Pages) Broadcom Corporation. – Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package

ATF-54143 Electrical Specifications
T_A = 25°C, RF parameters measured in a test circuit for a typical device
Symbol
Parameter and Test Condition
Units
Vgs
Operational Gate Voltage
Vds = 3V, Ids = 60 mA
V
Vth
Threshold Voltage
Vds = 3V, Ids = 4 mA
V
Idss
Saturated Drain Current
Vds = 3V, Vgs = 0V
μA
Gm
Transconductance
Vds = 3V, gm = ΔIdss/ΔVgs; mmho
ΔVgs = 0.75 - 0.7 = 0.05V
Igss
Gate Leakage Current
Vgd = Vgs = -3V
μA
NF
Noise Figure^[1]
f = 2 GHz Vds = 3V, Ids = 60 mA
dB
f = 900 MHz Vds = 3V, Ids = 60 mA
dB
Ga
Associated Gain^[1]
f = 2 GHz Vds = 3V, Ids = 60 mA
dB
f = 900 MHz Vds = 3V, Ids = 60 mA
dB
OIP3
Output 3^rd Order
f = 2 GHz Vds = 3V, Ids = 60 mA
dBm
Intercept Point^[1] f = 900 MHz Vds = 3V, Ids = 60 mA
dBm
P1dB
1dB Compressed
f = 2 GHz Vds = 3V, Ids = 60 mA
dBm
Output Power^[1] f = 900 MHz Vds = 3V, Ids = 60 mA
dBm
Notes:
1. Measurements obtained using production test board described in Figure 5.
2. Typical values measured from a sample size of 450 parts from 9 wafers.
Input
50 Ohm
Transmission
Line Including
Gate Bias T
(0.3 dB loss)
Input
Matching Circuit
Γ_mag = 0.30
Γ_ang = 150°
(0.3 dB loss)
Output
Matching Circuit
DUT
Γ_mag = 0.035
Γ_ang = -71°
(0.4 dB loss)
Min.
Typ.^[2] Max.
0.4
0.59
0.75
0.18
0.38
0.52
—
1
5
230
410
560
—
—
200
—
0.5
0.9
—
0.3
—
15
16.6
18.5
—
23.4
—
33
36.2
—
—
35.5
—
—
20.4
—
—
18.4
—
50 Ohm
Transmission
Line Including
Drain Bias T
(0.3 dB loss)
Output
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measurements. This circuit represents a
trade-off between an optimal noise match and associated impedance matching circuit losses. Circuit losses have been de-embedded from actual measure-
ments.
3