DEMO-ALM-12X24 Datasheet, PDF (2/12 Pages) Broadcom Corporation. – 50 Watt High Power SPDT Switch with LNA Module

Absolute Maximum Rating ^[1] T_A = 25° C
Symbol
V_c1,max
I_{c1 ,max}
V_c2,max
I_c2,max
V_bias
V_dd1,2
Vg
P_in,max
P_in,max
P_in,max
Rx P_diss
Tx P_diss
T_j
T_STG
T_amb
Parameter
Device Control Voltage 1
(At Rx mode)
Device Control Current 1
(At Rx mode)
Device Control Voltage 2
(At Tx mode)
Device Control Current 1
(At Tx mode)
Device Bias Voltage
Device Voltage, RF output to ground
Gate Voltage
Ant CW RF Input Power (Tx mode);
5 mins testing
Ant CW RF Input Power (Rx mode)
(Vdd = 5.0 V, Idd1 = 50 mA)
LNA2_In CW RF Input Power
(Vdd = 5.0 V, Idd2 = 120 mA)
Rx mode Total Power Dissipation ^[3]
LNA1
Rx mode Total Power Dissipation ^[3]
LNA2
Tx mode Total Power Dissipation
Junction Temperature
Storage Temperature
Ambient Temperature
Units Absolute Max.
V
30
mA 57
V
30
mA 57
V
5.5
V
5.5
V
0.7
dBm +47.5
dBm +20
dBm +25
W
0.3
W
0.5
W
8.70
°C
150
°C
-65 to 150
°C
-40 to 85
Rx mode Thermal Resistance ^[2]
LNA1: V_dd1 = 5.0 V, I_dd1 = 50 mA
LNA2: V_dd2 = 5.0 V, I_dd2 = 120 mA;
LNA1 _jc = 72.4°C/W
LNA2 _jc = 65.0°C/W
Tx mode Thermal Resistance ^[2]
LNA1: V_dd1 = 5.0 V, I_dd1 = 50 mA
LNA2: V_dd2 = 5.0 V, I_dd2 = 120 mA;
_jc = 11.7°C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Thermal resistance measured using Infra-Red
Measurement Technique.
3. Power dissipation in Rx mode with both LNA1
and LNA2 turned on. Board temperature T_B is
25° C.
LNA1: Derate at 14 mW/°C for T_B > 114° C.
LNA2: Derate at 15.6 mW/°C for T_B > 92° C.
4. Switch Turn On Condition:
Tx mode: Vbias = 5 V, Vc1 = 0 V, Vc2 = 28 V
Rx mode: Vbias = 5 V, Vc1 = 28 V, Vc2 = 0 V
Rx/Tx Switch Operating Truth Table ^[1]
Mode
Vbias (V)
Vc1 (V)
Vc2 (V)
Rx (Ant – Rx)
5
28
0
Tx (Ant – Tx)
5
0
28
Note:
1. Any state other than described above in the truth table may cause permanent damage to
the device.
2