DEMO-ALM-12X24 Datasheet, PDF(1/12 Page) Broadcom Corporation. – 50 Watt High Power SPDT Switch with LNA Module

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DEMO-ALM-12X24 Datasheet, PDF (1/12 Pages) Broadcom Corporation. – 50 Watt High Power SPDT Switch with LNA Module

ALM-12124

1.88 GHz â 2.025 GHz

50 Watt High Power SPDT Switch with LNA Module

Data Sheet

Description

Avago Technologiesâ ALM-12124 is a multi-chip integrated

module that comprise of a 50 Watt CW high power SPDT

switch, 1st stage low noise amplifier and 2nd stage high

gain driver amplifier through the use of Avago Techno-

logiesâ proprietary 0.25 ïm GaAs Enhancement-mode

pHEMT process and low distortion silicon PIN diode

technologies.

The ALM-12124 is housed in a compact 8.0 x 8.0 x 1.2 mm3

molded-chips-on-board (MCOB) module package with 24

pin configuration pads, offering significant PCB space saving

as compare to conventional discrete design approach.

The device offers high power protection switch (Tx mode

operation) with very low insertion loss. During Rx mode

operation, the receiver chain provides a very low NF and

high gain that makes it an ideal choice for cellular infra-

structure in TD-SCDMA and TD-LTE applications.

Component Image

Package Size : 8.0 x 8.0 x 1.2 mm3

AVAGO

12124

WWYY

XXXX

Gnd

Gnd

Gnd

Gnd

Gnd

Rx Out

Gnd

Vbias Vc 1 Gnd Gnd Gnd Tx

Pin 1

Ant

Gnd

Gnd

Vc 2

Vg

Vdd1

TOP VIEW

LNA2 Gnd Gnd Gnd Gnd LNA1

_In

_Out

BOTTOM VIEW

Note:

Package marking provides orientation and identification

â12124â = Device Part Number

âWWYYâ = Work week and year of manufacture

âXXXXâ = Last 4 digit of lot number

Notes:

1. Enhancement mode technology employs positive Vgs, thereby elimi-

nating the need of negative gate voltage associated with conven-

tional depletion mode devices.

Features

ï·ï Very Low Noise Figure

ï·ï High Power Switch design

ï·ï 50 dB isolation between LNA1_Out and LNA2_In

ï·ï Small package size 8.0 x 8.0 x 1.2 mm3

ï·ï GaAs E-pHEMT Technology [1]

ï·ï Low Distortion Silicon PIN Diode Technology

ï·ï MSL 2a and Lead-free

Specifications

Typical Performance at 1.90 GHz (Rx mode)

ï·ï 39.5 dB Gain

ï·ï 0.80 dB Noise Figure

ï·ï 36.4 dBm Output IP3

Typical Performance at 1.90 GHz (Tx mode)

ï·ï 0.27 dB insertion loss

ï·ï 40 dB Ant to LNA1 Isolation

Applications

ï·ï High power switch LNA module for TD-SCDMA and

TD-LTE base station front-end RF application.

Block Diagram with Simplified Schematic

Vc1 Vbias Vdd2

External

50 ohm

termination

Tx

C2

C6

C10

C7

Ant

C1

Vc2

PA

Vg

R1

C9

Vdd1 C3

Switch bias

circuitry

C8

L1

C5

Rx Out

C4

LNA1_Out LNA2_In

▷