AMMC-5040_15 Datasheet, PDF (3/10 Pages) AVAGO TECHNOLOGIES LIMITED – 20–45 GHz GaAs Amplifier

RF Specifications ^[1,2] (V = 4.5V, I (Q)= 300 mA, Z = 50Ω)
DD
DD
0
Symbol
|S |²
21
Δ|S |2
21
RL
in
RL
out
P
-1dB
P
-3dB
OIP3
|S |2
12
Parameters and Test Conditions
Small-signal Gain
Small-signal Gain Flatness
Input Return Loss
Output Return Loss
Output Power @ 1 dB Gain Compression
f = 22 GHz
Output Power @ 3 dB Gain Compression,
f = 22 GHz
Output 3^rd Order Intercept Point,
Δf = 2 MHz, P = -8 dBm, f = 22 GHz
in
Isolation
Units
GHz
dB
dB
dB
dB
dBm
dBm
dBm
dB
Broadband
23– 40
Min. Typ.
20
25
±1.5
15
17
8
11
20
21
30
40
55
Notes:
1. Data measured in wafer form, T = 25°C.
chuck
2. 100% on-wafer RF test is done at frequency = 24, 27, 29, 37 and 40 GHz, except as noted.
Narrow Band Typical Performance
21–24 27–29 37–40 40–45
Typical
25.5
25
22.4
21.3
±0.2 ±0.4 ±0.2 ±1.2
17
18
21
17
10
14
13
13
20
22.5
21
20
21.6
23.5
22.5
21.5
29
29
31
27
55
55
55
55
AMMC-5040 Typical Performance (T_chuck = 25°C)
30
35
30
26
25
22
20
18
14
10
20
25
30
35
40
45
FREQUENCY (GHz)
Figure 1. Gain, V_DD=4.5 V, I_DD=300 mA.
15
10
3V
3.5V
4V
5
4.5V
5V
0
20
25
30
35
40 45
FREQUENCY (GHz)
Figure 2. Gain and Drain Voltage,
I_DD=300 mA.
30
25
20
15
10
3.5V
4V
5
4.5V
5V
0
20
25
30
35
40 45
FREQUENCY (GHz)
Figure 4. Gain and Drain Voltage,
I_DD=350 mA.
35
30
25
20
15
150mA
10
200mA
250mA
300mA
5
350mA
400mA
0
20
25
30
35
40 45
FREQUENCY (GHz)
Figure 5. Gain and Drain Voltage, I_DD=4.5V.
3
0
S11(dB)
S22(dB)
-5
-10
-15
-20
-25
20
25
30
35
40 45
FREQUENCY (GHz)
Figure 3. Input and Output Return Loss,
V_DD=4.5V, I_DD=300 mA.
0
3.5V
-5
4V
4.5V
5V
-10
-15
-20
-25
-30
20
25
30
35
40 45
FREQUENCY (GHz)
Figure 6. Input Return Loss and Drain
Voltage, I_DD=350 mA.