AMMC-5040_15 Datasheet, PDF (2/10 Pages) AVAGO TECHNOLOGIES LIMITED – 20–45 GHz GaAs Amplifier

Absolute Maximum Ratings ^{[1,2,3,4, 5]}
Symbol
Parameters
Units Minimum Values Maximum Values Notes
V -V
Drain to Gate Voltage
V
8
dg
V
Positive Supply Voltage ^[2]
V
5
d
I
Total Drain Current ^[2]
mA
DD
550
2
V
Gate Supply Voltage
g
V
-3
0.5
P
Power Dissipation ^[2,3]
W
D
2.09
2 and 3
P
CW Input Power ^[2]
in
dBm
21
2
T
Operating Channel Temp ^[4,5]
°C
ch
+150
4,5
T
Storage Case Temp.
°C
stg
-65 to +150
T
Maximum Assembly Temp (30 sec max)
°C
max
+300
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to this device. Functional operation at or near these
limitations may significantly reduce the lifetime of the device.
2. Combinations of supply voltage, drain current, input power, and output power shall not exceed PD.
3. When operated at this condition with a base plate temperature of 85°C, the median time to failure (MTTF) is significantly reduced.
4. These ratings apply to each individual FET
5. The operating channel temperature will directly affect the device MTTF. For maximum life, it is recommended that junction temperatures be
maintained at the lowest possible levels.
DC Specifications/Physical Properties ^[6]
Symbol
V
D1,2-3-4
I
D1
I
D2-3-4
V
G1,2-3-4
V
P
T _ch-b
Parameters and Test Conditions
Drain Supply Operating Voltage
First Stage Drain Supply Current
(V = 4.5 V, V = -0.5 V)
DD
G1
Total Drain Supply Current for Stages 2, 3 and 4
(V = 4.5 V, V = -0.5 V)
DD
GG
Gate Supply Operating Voltages (I = 300 mA)
DD
Pinch-off Voltage (V = 4.5 V, I < 10 mA)
DD
DD
Thermal Resistance^[2] (Channel-to-Backside)
Units
Min.
Typ.
Max.
V
2
4.5
5
mA
50
mA
225
V
V
°C/W
-0.45
-1.5
31
Notes:
6.
Measured
in
wafer
form
with
T
chuck
=
25°C
(except
T
.)
ch-bs
7. Assume conductive epoxy to an evaluation RF board at 85°C base plate temperature.
Thermal Properties
Parameters
Maximum Power Dissipation
Thermal Resistance (θjc)
Thermal Resistance (θjc)
Under RF Drive
Test Conditions
Tbaseplate = 85°C
Vd = 4.5V
Idd = 300mA
P = 1.35W
D
Tbaseplate = 85°C
Vd = 4.5V
Idd = 306mA
Pout = 22dBm
P_D = 1.25W
Tbaseplate = 85°C
Value
P = 2.09W
D
Tchannel = 150°C
θjc = 31°C/W
Tchannel = 126.85°C
θjc = 31°C/W
Tchannel = 123°C
2