AMMC-5026 Datasheet, PDF (2/8 Pages) Agilent(Hewlett-Packard) – 2-35 GHz GaAs MMIC Traveling Wave Amplifier

AMMC-5026 DC Specifications/Physical Properties^[1]
Symbol Parameters and Test Conditions
Units Min. Typ. Max.
I_dss
Saturated Drain Current (V_dd=7 V, V_g1=0 V, V_g2=open circuit)
mA
250
350
450
V_p1
First Gate Pinch-off Voltage (V_dd=7 V, I_dd=0.1 I_dss, V_g2=open circuit)
V
-1.2
V_g2
Second Gate Self-bias Voltage (V_dd=7 V, I_dd=150 mA, V_g2=open circuit)
V
3.5
I_dsoff
First Gate Pinch-off Current
(V_g1)
(V_dd=7 V, V_g1=3.5 V, V_g2=open circuit)
mA
75
θ_ch-b
Thermal Resistance^[2] (Backside temperature, T_b = 25°C)
°C/W
28
Notes:
1. Backside temperature T_b = 25°C unless otherwise noted.
2. Channel-to-backside Thermal Resistance (θ_ch-b) = 38°C/W at T_channel (T_c) = 150°C as measured using the liquid crystal method. Thermal Resistance at
backside temperature (T_b) = 25°C calculated from measured data.
RF Specifications^[3,4] (V_dd = 7V, I_dd (Q) = 150 mA, Z_in = Z₀ = 50Ω)
Symbol
Parameters and Test Conditions
Units
|S₂₁|²
Small-signal Gain
dB
∆ |S₂₁|²
Small-signal Gain Flatness
dB
RL_in
Input Return Loss
dB
RL_out
Output Return Loss
dB
|S₁₂|²
Isolation
dB
P_-1dB
Output Power @ 1 dB Gain Compression
f = 10 GHz
dBm
P_sat
Saturated Output Power
f = 10 GHz
dBm
OIP3
Output 3^rd Order Intercept Point,
dBm
RF_in1 = RF_in2 = - 20 dBm, f = 10 GHz, ∆f = 2 MHz
NF
Noise Figure
f = 10 GHz
dB
f = 20 GHz
dB
H2
Second Harmonic (P_in = 12 dBm at 10 GHz)
dBc
H3
Third Harmonic (P_in = 12 dBm at 10 GHz)
dBc
Notes:
1. Data measured in wafer form, T_chuck = 25°C.
2. 100% on wafer RF test is done at frequency = 2, 10, 22, 26.5, and 35 GHz, except as noted.
Min.
8.5
13
12
23
22
Typ.
10.5
±0.75
17
15
26
24
26
31
3.6
4.3
-20
-30
Max.
12.5
±1.5
-17.5
-28
2