AMMC-5026 Datasheet, PDF (1/8 Pages) Agilent(Hewlett-Packard) – 2-35 GHz GaAs MMIC Traveling Wave Amplifier

AMMC-5026
2–35 GHz GaAs MMIC Traveling Wave Amplifier
Data Sheet
Chip Size:
Chip Size Tolerance:
Chip Thickness:
Pad Dimensions:
3050 x 840 µm (119 x 33 mils)
±10 µm (±0.4 mils)
100 ± 10 µm (4 ± 0.4 mils)
75 x 75 µm (2.9 ± 0.4 mils)
Description
The AMMC-5026 is a broadband PHEMT GaAs MMIC
Traveling Wave Amplifier (TWA) designed for medium
output power and high gain over the full 2 GHz to 35
GHz frequency range. The design employs a 6-section
cascode connected FET structure to provide flat gain
and medium power as well as uniform group delay.
For improved reliability and moisture protection, the
die is passivated at the active areas.
Features
• Frequency range: 2 – 35 GHz
• Gain: 10.5 dB
• Gain flatness: ±0.8 dB
• Return loss: Input 17 dB, Output: 15 dB
• Output power (P-1dB):
24 dBm at 10 GHz
23 dBm at 20 GHz
22 dBm at 26 GHz
• Noise figure (6–19 GHz): ≤ 4 dB
Applications
• Broadband gain block
• Broadband driver amplifier
• 10 Gb/s Fiber Optics
Absolute Maximum Ratings^[1]
Symbol Parameters/Conditions
Units
Min.
Max.
V_dd
Positive Drain Voltage
V
10
I_dd
Total Drain Current
mA
450
V_g1
First Gate Voltage
V
-5
I_g1
First Gate Current
mA
-9
+5
V_g2
Second Gate Voltage
V
-3
+3.5
I_g2
Second Gate Current
mA
-10
P_in
CW Input Power
dBm
23
T_ch
Channel Temperature
°C
+150
T_b
Operating Backside Temperature
°C
-55
T_stg
Storage Temperature
°C
-65
+165
T_max
Max. Assembly Temp (60 sec max)
°C
+300
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.