THN5601B Datasheet, PDF (5/7 Pages) Tachyonics CO,. LTD – NPN SiGe RF POWER TRANSISTOR

THN5601B
□ Application Information (II)
RF performance at Ts ≤ 60 ℃ in common emitter configuration. (I_CQ = 5mA)
Mode of Operation
f [MHz]
V_CE [V]
P_L [mW]
CW, class-AB
450
4.8
630
G_P [dB]
≥ 14
η_C [%]
≥ 60
Optimum Input/Load Impedance as a frequency
Freq.
[MHz]
400
450
500
550
600
R_S
8.35
7.38
6.80
6.74
7.03
Z_S
X_S
-3.34
-7.19
-11.03
-14.89
-18.92
Z_L
R_L
X_L
23.32 4.19
20.24 9.95
18.27 16.37
17.30 23.65
17.05 32.08
Z_L
Z_S
Input Impedance
vs. Frequency
20
15
10
R
S
5
0
-5
-10
X
S
-15
-20
350 400 450 500 550 600 650
Frequency (MHz)
Load Impedance
vs. Frequency
35
30
25
R
L
20
15
X
L
10
5
0
350 400 450 500 550 600 650
Frequency (MHz)
5