THN5601B Datasheet, PDF (1/7 Pages) Tachyonics CO,. LTD – NPN SiGe RF POWER TRANSISTOR

Semiconductor
□ Applications
o VHF and UHF band medium power amplifier
□ Features
o 4.8 V operation
o P_1dB = 28 dBm at f = 900 MHz
o G_P = 8.5 dB at f = 900 MHz
THN5601B
SiGe NPN Transistor
SOT-223
Unit in mm
6.5
3.0
4
3.5 7.0
1
2
3
2.3
0.7
4.6
□ Absolute Maximum Ratings (T_A = 25 ℃)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_stg
T_j
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Current
Total Power Dissipation
Storage Temperature
Operating Junction Temperature
Pin Configuration
Pin No
Symbol
1
E
2
B
3
E
4
C
Ratings
20
8
3
350
1
-65 ~ 150
150
Description
Emitter
Base
Emitter
Collector
Unit
V
V
V
mA
W
℃
℃
1